HJT solar cells manufacturing process
To produce the electric structures of heterojunction cells, it is necessary to apply thin layers of doped and intrinsic amorphous silicon on both sides of n-type silicon wafers as well as transparent, conductive oxide layers (TCO) to absorb the generated power.
As a result of the high light yield and outstanding passivation characteristics of amorphous silicon, it is possible to reach efficiency rates of more than 24%. Moreover, heterojunction cells show a considerably lower temperature coefficient than conventional silicon solar cells.
More cost advantages result from the relatively easy low temperature production concept, which is therefore economically attractive, as it is saving energy and requires fewer production steps.