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With sputter etching, the inert ions produced in a gas discharge (e.g. noble gas ions) are accelerated towards the substrate which is in contact with the plasma.

The plasma is generated in a parallel-plate reactor. In essence, ion beam etching functions in a similar way, except that in this case, the ions are accelerated towards the substrate using an ion cannon. Plasma and substrate are spatially separated. The deposition takes place through pure sputtering.


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