Heterojunction Cell Line
Latest-generation integrated cell line
Heterojunction technology works with n-type wafers and combines the advantages of crystalline silicon solar cells with the superb absorption and passivation properties of amorphous silicon – already well established in thin-film technology.
In an integrated process, the HJT cell is produced in just six process steps. The central machinery used to achieve this are the HELiAPECVD and the HELiAPVD. The HELiAPECVD is used for PECVD deposition of amorphous silicon layers on the front and rear. The HELiAPVD deposits TCO layers on the front and rear using PVD sputtering. Busbar-free metallization is then applied on both sides via screen printing, enabling extremely low silver consumption.
- High light yield and outstanding passivation properties thanks to amorphous silicon
- The finished solar cell has a low temperature coefficient
- Efficiencies in excess of 23% are possible
- Lower production costs thanks to the low temperature process and fewer manufacturing steps